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Open Access Article

Journal of Electrical Engineering and Automation. 2026; 5: (1) ; 27-32 ; DOI: 10.12208/j.jeea.20260004.

Design and analysis of forced air-cooling scheme based on porous jets for SiC MOSFET
SiC MOSFET多孔射流强迫风冷方案设计与分析

作者: 巩飞 *, 郭鸿浩, 刘泽远

南京邮电大学自动化学院 江苏南京

*通讯作者: 巩飞,单位:南京邮电大学自动化学院 江苏南京; ;

发布时间: 2026-03-19 总浏览量: 41

摘要

针对SiC MOSFET器件的温升问题,提出了多孔射流的强迫风冷散热方案,采用ANSYS ICEPAK仿真分析了不同风冷方案下的散热性能表现。研究结果表明,底部多孔射流方案设计可以实现更低的芯片温度与更优的温度分布均匀性;针对SiC MOSFET器件的直接射流方案设计,射流冷却与散热器有效面积的下降形成了相互抵消作用,其实际散热效果不及预期;综合考虑风口布局与散热器结构特征,进而改善散热器气流分布是风冷方案设计的重点,单纯的射流冷却并非最优选择。研究工作为高功率开关器件的热管理设计提供了参考依据。

关键词: SiC MOSFET;强迫风冷;射流冷却;散热器

Abstract

Aiming at the temperature rise problem of SiC MOSFET devices, one kind of forced air-cooling scheme based on porous jets was proposed. The thermal performance of different air-cooling schemes was analyzed using ANSYS ICEPAK simulation. The research results show that the bottom porous jet scheme design can achieve lower chip temperatures and better temperature uniformity distribution. For the top direct jet scheme design of SiC MOSFET devices, the jet cooling and the reduction in the effective area of the heatsink form a mutually counteracting effect, and its actual cooling effect is not as expected. The key point in the design of the air-cooling scheme is to comprehensively consider the layout of the air outlet and the structural characteristics of the heatsink, and then improve the airflow distribution around the heatsink. Pure jet cooling is not the best choice. The research work provides a reference basis for the thermal management design of high-power switching devices.

Key words: SiC MOSFET; Forced air-cooling; Jet cooling; Heatsink

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引用本文

巩飞, 郭鸿浩, 刘泽远, SiC MOSFET多孔射流强迫风冷方案设计与分析[J]. 电气工程与自动化, 2026; 5: (1) : 27-32.