参考文献 References
[1] Huang Y P, Hsu W C, Liu H Y, et al. Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications[J]. IEEE Electron Device Letters, 2019:1-1.
[2] Zhu M, Ma J, Nela L, et al. High-voltage normally-off recessed tri-gate GaN power MOSFETs with low on-resistance[J]. IEEE Electron Device Letters, 2019, PP(99):1-1.
[3] Huang H, Sun Z, Cao Y, et al. Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures[J]. Journal of Physics D Applied Physics, 2018.
[4] Sun Z, Cheng W, Gao J, et al. Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics[J]. IEEE Electron Device Letters, 2019, PP(99):1-1.
[5] Sun N, Huang H, Sun Z, et al. Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment[J]. IEEE Transactions on Electron Devices, 2022(69-1).
[6] Nakazawa S, Shiozaki N, Negoro N, et al. Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth[J]. Japanese Journal of Applied Physics, 2017, 56(9):091003.
[7] Hashizume T, Nishiguchi K, Kaneki S, et al. State of the art on gate insulation and surface passivation for GaNbased power HEMTs[J]. Materials Science in Semiconductor Processing, 2018, 78.
[8] Nakazawa S, Shih H A, Tsurumi N, et al. Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator[C]// 2017 IEEE International Electron Devices Meeting (IEDM). IEEE, 2017.
[9] Robertson J, Falabretti B. Band offsets of high K gate oxides on III-V semiconductors[J]. Journal of Applied Physics, 2006, 100(1):5243-3.
[10] M.D. Groner, Elam J W, Fabreguette F H, et al. Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrate[J]. Thin Solid Films, 2002.
[11] Liu Z H, Ng G I, Arulkumaran S, et al. High Microwave-Noise Performance of AlGaN/GaN MISHE-MTs on Silicon With, Gate Insulator Grown by ALD[J]. Electron Device Letters, IEEE, 2010, 31(2):P.96-98.
[12] Esposto M, Krishnamoorthy S, Nath D N, et al. Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride[J]. Applied Physics Letters, 2011, 99(13):063501.
[13] Ganguly S, Verma J, Li G, et al. Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions[J]. Applied Physics Letters, 2011, 99(19).
[14] Marron T, Takashima S, Li Z, et al. Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices[J]. Physica Status Solidi, 2012, 9(3-4):907-910.
[15] Groner, M. D, Elam, et al. Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates.[J]. Thin Solid Films, 2002.
[16] 郝跃, 张金风, 张进成. 氮化物宽禁带半导体材料与电子器件[M]. 科学出版社, 2013.
[17] 施敏. 半导体器件物理与工艺[M]. 科学出版社, 1992.