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Open Access Article

Journal of Electrical Engineering and Automation. 2023; 2: (2) ; 1-6 ; DOI: 10.12208/j.jeea.20230007.

Effect of annealing on Performance of ALD Al2O3 insulated gate AlGaN/GaN MOS-HEMT Devices
退火对ALD Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件性能影响

作者: 李书兴, 孙楠, 刘艳红, 代建勋, 黄火林 *

大连理工大学光电工程与仪器科学学院 辽宁大连

大连理工大学物理学院 辽宁大连

*通讯作者: 黄火林,单位:大连理工大学光电工程与仪器科学学院 辽宁大连;

发布时间: 2023-04-07 总浏览量: 508

摘要

首先研究了不同退火温度对ALD Al2O3绝缘栅介质的性能影响,进一步验证了栅极后退火(PGA)对Al2O3 AlGaN/GaN MOS-HEMT器件性能影响。实验结果表明,在400 ℃的N2氛围下5分钟快速热退火处理可以有效改善介电材料的固定电荷和耐压性能。氧化铝的击穿场强由7.0 MV/cm提高到8.0 MV/cm,滞回C-V测量表明,Al2O3中的负固定电荷密度增加一个量级、可移动电荷显著降低。经过400 ℃后栅退火(PGA)制作的Al2O3-AlGaN/GaN MOS-HEMT器件阈值电压0.7 V,亚阈值斜率230 mV/dec,栅极最大偏置电压14 V,饱和电流600 mA/mm,导通电阻为5.88 Ω•mm,109的高导通/关态电流比、小于10-6 mA/mm的低关态漏电流。

关键词: Al2O3;原子层沉积;MOSCAP;AlGaN/GaN MOS-HEMT

Abstract

The effects of different annealing temperatures on the properties of Al2O3 gate dielectric were investigated, and the effects of post-gate annealing (PGA) on the properties of Al2O3 AlGaN/GaN MOS-HEMT devices were further verified. The results show that the fixed charge and voltage resistance of the dielectric material can be improved by annealing at 400 ℃ N2 for 5 min. The breakdown field strength of alumina increases from 7.0 MV/cm to 8.0 MV/cm. The hysteresis C-V measurements show that the negative fixed charge density increases by an order of magnitude and the movable charge decreases significantly. The Al2O3 AlGaN/GaN MOS-HEMT device fabricated by 400 ℃ post-gate annealing (PGA) has a threshold voltage of 0.7 V, a sub-threshold slope of 230 MV/dec, a maximum gate bias voltage of 14 V, a saturation current of 600 mA/mm, and an on-resistance of 5.88 Ω· mm, 109 high on/off ratio, low off-state leakage current less than 10-6 mA/mm.

Key words: Al2O3; Atomic layer deposition; MOSCAP; AlGaN/GaN MOS-HEMT

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引用本文

李书兴, 孙楠, 刘艳红, 代建勋, 黄火林, 退火对ALD Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件性能影响[J]. 电气工程与自动化, 2023; 2: (2) : 1-6.